1 . 9 0 . 9 5 0 . 9 5 2 . 9 0 . 4 1. 3 2. 4 1 . 0 jiangsu changjiang electronics technology co., ltd sot-23 plastic-encapsulate transistors 2sc3052 transistor (npn) features power dissipation p cm : 0.15 w (tamb=25 ) collector current i cm: 0.2 a collector-base voltage v (br) cbo : 50 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br) cbo i c = 100 a, i e =0 50 v collector-emitter breakdown voltage v (br) ceo i c = 100 a, i b =0 50 v emitter-base breakdown voltage v (br) ebo i e = 100 a, i c =0 6 v collector cut-off current i cbo v cb = 50 v , i e =0 0.1 a emitter cut-off current i ebo v eb = 6v , i c =0 0.1 a h fe(1) v ce = 6v, i c = 1ma 150 800 dc current gain h fe(2) v ce = 6v, i c = 0.1ma 50 collector-emitter saturation voltage v ce (sat) i c =100ma, i b = 10ma 0.3 v base-emitter saturation voltage v be (sat) i c = 100ma, i b = 10ma 1 v transition frequency f t v ce = 6v, i c = 10ma 180 mhz collector output capacitance c ob v ce =6v, i e =0, f=1mhz 4 pf noise figure nf v ce =6v,i e =-0.1ma, f=1khz, r g =2k ? 15 db classification of h fe(1) rank e f g range 150~300 250~500 400~800 marking le lf lg unit: mm sot-23 1. base 2. emitter 3. collector
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